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Reach-Through nei transistor

MessaggioInviato: 25 feb 2013, 13:19
da paologerv
Qualcuno saprebbe dirmi se il "Reach - Through" in una giunzione ad esempio npn corrisponde al "Punch-Through" ??

Re: Reach-Through nei transistor

MessaggioInviato: 25 feb 2013, 22:54
da Phoedus
Ciao,
Cercando una risposta alla tua domanda...
Ho trovato questo:

http://ptuece.loremate.com/edc/node/2

da cui è tratto:
"(b) Output Characteristics : The curve drawn between collector current and collector base voltages for a given emitter current is output characteristics. The varies with only for a very low voltage but transistor is never operated in this region.
In active region, is almost equal to and appears constant with increase in . This is because the increase in expands the collector base depletion region and thus shortens the distance between the two depletion regions. When is constant, is so small that it is noticed only for large variation in . Transistor is normally operated in this region.
Although is practically independent of over the transistor operating range. However, if is increased beyond a certain value, increases rapidly because of avalanche or zener or both effects. It is known as punch through or reach through, thus destroying the device. It is necessary to maintain .
A very large change in causes very small change in . hence output dynamic resistance is very high.

In cut off small current occurs i.e.
In saturation region, flows even when = 0.
CB configuration is rarely used in audio frequency (AF) circuits because its current given is less than unity and its input/output resistance are quite different."

Penso e spero possa essere una dimostrazione del fatto che siano sinonimi :-)

Re: Reach-Through nei transistor

MessaggioInviato: 26 feb 2013, 10:43
da paologerv
Grazie per la dritta Phoedus :ok: